IRF7205PBF vs IRF9Z34NPBF Vergleich

Detaillierter Direktvergleich von IRF7205PBF von Infineon und IRF9Z34NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7205PBF IRF9Z34NPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,47 $0,65
Polarity P-Channel —
Drain-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) -4.6 A —
On-Resistance RDS(on) max at VGS=-10V 70 mOhm —
On-Resistance RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) -1 V to -3 V (typical) —
Gate Charge Qg [DATA_NEEDED: total gate charge] —
Technology IR MOSFET (HEXFET, planar cell) HEXFET (5th generation)
Gehäuse SO-8 TO-220AB (through-hole, 3-pin)
Montageart Surface Mount Through Hole
Betriebstemperaturbereich -55 C to +150 C (junction) -55C to +175C (junction)
Power Dissipation (TA=25C) [DATA_NEEDED: Pd at TA=25C] —
Switching Frequency Optimization Below 100 kHz —
Qualification JEDEC standard —
RoHS-Status Compliant (Pb-free per PBF suffix) Compliant
Generation Fourth Generation HEXFET —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)

Datenblätter & Ressourcen

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