IRF7205PBF vs IRF9Z34NPBF 对比
详细并排对比 IRF7205PBF 出自 Infineon 和 IRF9Z34NPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IRF7205PBF | IRF9Z34NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.47 | $0.65 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) | -4.6 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 70 mOhm | — |
| On-Resistance RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V (typical) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | IR MOSFET (HEXFET, planar cell) | HEXFET (5th generation) |
| 封装 | SO-8 | TO-220AB (through-hole, 3-pin) |
| 安装类型 | Surface Mount | Through Hole |
| 工作温度范围 | -55 C to +150 C (junction) | -55C to +175C (junction) |
| Power Dissipation (TA=25C) | [DATA_NEEDED: Pd at TA=25C] | — |
| Switching Frequency Optimization | Below 100 kHz | — |
| Qualification | JEDEC standard | — |
| RoHS 状态 | Compliant (Pb-free per PBF suffix) | Compliant |
| Generation | Fourth Generation HEXFET | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) at Tc=25C | — | -19 A |
| Pulsed Drain Current (Idm) | — | -72 A |
| Power Dissipation (Pd) at Tc=25C | — | 68 W |
| On-Resistance Rds(on) at Vgs=-10V | — | 100 milliohm (typical) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical/min/max] |
| Gate Charge (Qg) | — | 23.3 nC (per Mouser listing) |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Pinout (G-D-S) | — | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source |
| Lead-Free / Halogen-Free | — | Yes (PBF suffix) |