IRF7205PBF vs IRFR9024NTRLPBF Vergleich
Detaillierter Direktvergleich von IRF7205PBF von Infineon und IRFR9024NTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7205PBF | IRFR9024NTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,47 | $0,32 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -55 V |
| Continuous Drain Current (ID) | -4.6 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 70 mOhm | 175 mOhm |
| On-Resistance RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V (typical) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | IR MOSFET (HEXFET, planar cell) | HEXFET (Generation 5) |
| Gehäuse | SO-8 | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55 C to +150 C (junction) | -55C to +175C |
| Power Dissipation (TA=25C) | [DATA_NEEDED: Pd at TA=25C] | — |
| Switching Frequency Optimization | Below 100 kHz | — |
| Qualification | JEDEC standard | — |
| RoHS-Status | Compliant (Pb-free per PBF suffix) | — |
| Generation | Fourth Generation HEXFET | — |
| MOSFET Operating Mode | — | Enhancement |
| Continuous Drain Current (ID) at TC=25C | — | -11 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| Pin-Anzahl | — | 3 (Drain, Gate, Source + Tab) |
| Lead-Free / RoHS | — | Yes (LPBF suffix) |
| Reel Orientation | — | Left (TRL suffix) |