IRF7205PBF vs IRFR9024NTRLPBF Comparación
Comparación detallada lado a lado de IRF7205PBF por Infineon y IRFR9024NTRLPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7205PBF | IRFR9024NTRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,47 | $0,32 |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -30 V | -55 V |
| Continuous Drain Current (ID) | -4.6 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 70 mOhm | 175 mOhm |
| On-Resistance RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) | -1 V to -3 V (typical) | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | IR MOSFET (HEXFET, planar cell) | HEXFET (Generation 5) |
| Encapsulado | SO-8 | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +150 C (junction) | -55C to +175C |
| Power Dissipation (TA=25C) | [DATA_NEEDED: Pd at TA=25C] | — |
| Switching Frequency Optimization | Below 100 kHz | — |
| Qualification | JEDEC standard | — |
| Estado RoHS | Compliant (Pb-free per PBF suffix) | — |
| Generation | Fourth Generation HEXFET | — |
| MOSFET Operating Mode | — | Enhancement |
| Continuous Drain Current (ID) at TC=25C | — | -11 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Power Dissipation (PD) at TC=25C | — | 38 W |
| Gate Charge (Qg) typical | — | 12.7 nC |
| Package Type | — | TO-252AA (DPAK) |
| Recuento de pines | — | 3 (Drain, Gate, Source + Tab) |
| Lead-Free / RoHS | — | Yes (LPBF suffix) |
| Reel Orientation | — | Left (TRL suffix) |