IRF7319TRPBF vs STS5DNF60L Vergleich
Detaillierter Direktvergleich von IRF7319TRPBF von Infineon und STS5DNF60L von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ AktivSpezifikationsvergleich
| Parameter | IRF7319TRPBF | STS5DNF60L |
|---|---|---|
| Marke | Infineon | STMicroelectronics |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,62 | $0,48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Type | Dual MOSFET Array (N-channel + P-channel) | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | STripFET II trench N-channel |
| Drain-to-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current N-channel (ID) | 6.5 A | — |
| Continuous Drain Current P-channel (ID) | 4.9 A | — |
| RDS(on) Max N-channel | 29 mOhm (per Infineon product page) | — |
| RDS(on) Max P-channel | [DATA_NEEDED: P-channel RDS(on) max] | — |
| Total Power Dissipation (PD) | 2 W | — |
| Thermal Resistance Junction-to-Ambient N-ch | 120 C/W (steady state) | — |
| Thermal Resistance Junction-to-Ambient P-ch | 110 C/W (steady state) | — |
| Package Type | 8-SOIC (SO-8) | — |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | [DATA_NEEDED: operating temperature min/max] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Lead-Free / RoHS | Yes (PBF suffix = Pb-free) | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Configuration | N-Channel + P-Channel (complementary half-bridge) | Dual independent N-channel |
| Drain-to-Source Voltage (V_DSS) | — | 60 V |
| Continuous Drain Current (I_D) at 25 °C | — | 5 A per channel |
| On-Resistance R_DS(on) (typ.) | — | 35 mΩ at V_GS = 10 V |
| On-Resistance R_DS(on) (max) | — | 45 mΩ at V_GS = 10 V, I_D = 2 A |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) value] |
| Gate Charge Q_g | — | [DATA_NEEDED: Q_g total gate charge value] |
| Gehäuse | — | SO-8 (8-SOIC, surface mount) |
| Power Dissipation P_D (per datasheet) | — | 2 W |
| Automotive Grade | — | Automotive-grade qualified |
| RoHS Compliance | — | Compliant |
| Avalanche Rating | — | 100% avalanche tested |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |