IRF7319TRPBF vs STS5DNF60L 비교

다음의 상세 나란히 비교: IRF7319TRPBF 제조: Infineon 및 STS5DNF60L 제조: STMicroelectronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRF7319TRPBF STS5DNF60L
브랜드 Infineon STMicroelectronics
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.62 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET STripFET II trench N-channel
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
실장 유형 Surface Mount Surface Mount
동작 온도 범위 -55C to +150C (junction) [DATA_NEEDED: operating temperature min/max]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) —
Configuration N-Channel + P-Channel (complementary half-bridge) Dual independent N-channel
Drain-to-Source Voltage (V_DSS) — 60 V
Continuous Drain Current (I_D) at 25 °C — 5 A per channel
On-Resistance R_DS(on) (typ.) — 35 mΩ at V_GS = 10 V
On-Resistance R_DS(on) (max) — 45 mΩ at V_GS = 10 V, I_D = 2 A
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) value]
Gate Charge Q_g — [DATA_NEEDED: Q_g total gate charge value]
패키지 — SO-8 (8-SOIC, surface mount)
Power Dissipation P_D (per datasheet) — 2 W
Automotive Grade — Automotive-grade qualified
RoHS Compliance — Compliant
Avalanche Rating — 100% avalanche tested
MSL 레벨 — [DATA_NEEDED: MSL rating]

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청