IRF7342PBF vs IRF7389TRPBF Vergleich
Detaillierter Direktvergleich von IRF7342PBF von Infineon und IRF7389TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7342PBF | IRF7389TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,89 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Part Number | IRF7342PBF | — |
| Original Mfr | International Rectifier (now Infineon) | — |
| Technology | HEXFET (Gen V) - P-Channel MOSFET Array | HEXFET Generation V (IR MOSFET) |
| Configuration | Dual P-Channel (2 independent MOSFETs) | Dual N+P Complementary Half-Bridge |
| Drain-Source Voltage V(DSS) | -55 V | — |
| Continuous Drain Current I(D) | 3.4 A | — |
| On-Resistance R(DS(on)) | 0.105 ohm | — |
| Power Dissipation P(D) | 2 W | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse / Bauform | 8-SOIC (SO-8) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Vgs(th) | [DATA_NEEDED: Vgs(th)] | — |
| Switching Frequency Optimization | < 100 kHz | — |
| RoHS-Status | Compliant | — |
| Halogen Status | Halogen-Free | — |
| Qualification | JEDEC standard | — |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| Gehäuse | — | 8-SO (SOIC-8) |
| Betriebstemperatur | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| MSL-Level | — | 1 |