IRF7342PBF vs IRF7389TRPBF Comparación
Comparación detallada lado a lado de IRF7342PBF por Infineon y IRF7389TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRF7342PBF | IRF7389TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon (formerly International Rectifier) |
| Part Number | IRF7342PBF | — |
| Original Mfr | International Rectifier (now Infineon) | — |
| Technology | HEXFET (Gen V) - P-Channel MOSFET Array | HEXFET Generation V (IR MOSFET) |
| Configuration | Dual P-Channel (2 independent MOSFETs) | Dual N+P Complementary Half-Bridge |
| Drain-Source Voltage V(DSS) | -55 V | — |
| Continuous Drain Current I(D) | 3.4 A | — |
| On-Resistance R(DS(on)) | 0.105 ohm | — |
| Power Dissipation P(D) | 2 W | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Encapsulado / Carcasa | 8-SOIC (SO-8) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Vgs(th) | [DATA_NEEDED: Vgs(th)] | — |
| Switching Frequency Optimization | < 100 kHz | — |
| Estado RoHS | Compliant | — |
| Halogen Status | Halogen-Free | — |
| Qualification | JEDEC standard | — |
| Transistor Polarity | — | N and P Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (N-Ch, Id) | — | 7.3 A |
| Continuous Drain Current (P-Ch, Id) | — | -5.3 A |
| On-Resistance RDS(on) Max | — | 29 mOhm |
| Power Dissipation (Pd) | — | 2.5 W |
| Encapsulado | — | 8-SO (SOIC-8) |
| Temperatura de funcionamiento | — | -55C to +150C |
| Avalanche Rated | — | Yes |
| Lead Free / RoHS | — | Lead Free / RoHS Compliant |
| Nivel MSL | — | 1 |