IRF7815TRPBF vs IRFR3411TRPBF Vergleich
Detaillierter Direktvergleich von IRF7815TRPBF von Infineon und IRFR3411TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7815TRPBF | IRFR3411TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,55 |
| FET Type | N-Channel MOSFET | MOSFET (Metal Oxide) |
| Technology | IR MOSFET (HEXFET) | HEXFET Power MOSFET (IR) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Rds(on) Max at Vgs=10V | 43 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V | — |
| Total Gate Charge (Qg) Typ | 25 nC | — |
| Maximum Power Dissipation (Ta=25C) | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | -55 C to +175 C |
| Gehäuse | SO-8 (8-SO) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Configuration | Single | — |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Polarity | — | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| RDS(on) max @ VGS=10V | — | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Maximum Junction Temperature | — | 175 C |
| Anzahl der Pins | — | 3 |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Lead-Free / RoHS | — | Yes (Lead-free, PBF suffix) |