IRF7815TRPBF vs IRFR4615TRLPBF Vergleich
Detaillierter Direktvergleich von IRF7815TRPBF von Infineon und IRFR4615TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF7815TRPBF | IRFR4615TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,39 |
| FET Type | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Rds(on) Max at Vgs=10V | 43 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V | — |
| Total Gate Charge (Qg) Typ | 25 nC | — |
| Maximum Power Dissipation (Ta=25C) | 2.5 W | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | -55C to +175C |
| Gehäuse | SO-8 (8-SO) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Configuration | Single | — |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Einzelpuls-Avalanche-Energie | — | 109 mJ |