IRF7854TRPBF vs IRF7389PBF Vergleich

Detaillierter Direktvergleich von IRF7854TRPBF von Infineon und IRF7389PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7854TRPBF IRF7389PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $0,61
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta=25°C 10 A —
Power Dissipation (PD) at Ta=25°C 2.5 W —
On-Resistance RDS(on) max at VGS=10V 13.4 mΩ —
Gate-Source Threshold Voltage VGS(th) max 4.9 V —
Total Gate Charge Qg 27 nC —
Gehäuse SO-8 SO-8 (SOIC-8) surface mount
Montageart Surface Mount Surface Mount
Technology HEXFET (planar N-channel) Generation V HEXFET
Betriebstemperaturbereich -55°C to +150°C (TJ) [DATA_NEEDED: full operating temperature range]
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Qualification JEDEC industrial, Normal level —
Solder Process Reflow and wave-solderable —
Gate Drive Voltage (recommended) 10 V —
Configuration — N and P-Channel (complementary half-bridge)
Drain-to-Source Voltage N-Ch (V_DSS) — 30 V
Drain-to-Source Voltage P-Ch (V_DSS) — -30 V
Continuous Drain Current N-Ch (I_D) — 7.3 A
Continuous Drain Current P-Ch (I_D) — -5.3 A
On-Resistance N-Ch R_DS(on) max — 0.029 ohm at V_GS=10V
On-Resistance P-Ch R_DS(on) max — 0.058 ohm at V_GS=10V
Total Gate Charge N-Ch (Q_g) typical — 22 nC
Total Gate Charge P-Ch (Q_g) typical — 23 nC
Power Dissipation (P_D) — 2.5 W
Pinout — Industry-standard complementary SO-8
RoHS-Status — Compliant
Lead-Free — Yes
Halogenfrei — Yes
Avalanche Rated — Yes (fully avalanche rated)

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