IRF9952TRPBF vs IRF7907TRPBF Vergleich
Detaillierter Direktvergleich von IRF9952TRPBF von Infineon und IRF7907TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF9952TRPBF | IRF7907TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,32 | $0,43 |
| Polarity / Configuration | Complementary N-Channel + P-Channel, dual MOSFET array | — |
| N-Channel VDS (Drain-Source Voltage) | 30 V | — |
| P-Channel VDS (Drain-Source Voltage) | -30 V | — |
| N-Channel Continuous Drain Current (ID) | 3.5 A | — |
| P-Channel Continuous Drain Current (ID) | 2.3 A | — |
| N-Channel R_DS(on) max | 0.10 ohm (at VGS = 10 V) | — |
| P-Channel R_DS(on) max | 0.25 ohm (at VGS = -10 V) | — |
| Total Package Power Dissipation (PD) | 2 W | — |
| Technology | IR MOSFET / Fifth Generation HEXFET | IR MOSFET (Infineon hexfet-style trench) |
| Gehäuse | 8-pin SOIC (SO-8), surface mount | 8-SOIC (SO-8) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 C to +150 C |
| RoHS-Status | Compliant (Pb-free, indicated by PBF suffix) | Compliant |
| Tape and Reel Packaging | Yes (TRPBF suffix) | — |
| Qualification | Consumer market | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 9.1 A per channel at 25 C |
| Pulsed Drain Current (IDM) Max | — | 11 A |
| On-Resistance (RDS(on)) Max | — | 11.8 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.35 V (typ) |
| Total Power Dissipation (PD) Max | — | 2 W |
| Lead-Free Status | — | Yes (PBF suffix) |
| Packaging | — | Tape & Reel (TR) |
| Channel Polarity | — | N-Channel (both) |