IRF9Z34NPBF vs IRF7205PBF Vergleich
Detaillierter Direktvergleich von IRF9Z34NPBF von Infineon und IRF7205PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF9Z34NPBF | IRF7205PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,65 | $0,47 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) at Tc=25C | -19 A | — |
| Pulsed Drain Current (Idm) | -72 A | — |
| Power Dissipation (Pd) at Tc=25C | 68 W | — |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | — |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Betriebstemperaturbereich | -55C to +175C (junction) | -55 C to +150 C (junction) |
| Gehäuse | TO-220AB (through-hole, 3-pin) | SO-8 |
| Montageart | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | — |
| Technology | HEXFET (5th generation) | IR MOSFET (HEXFET, planar cell) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | — |
| RoHS-Status | Compliant | Compliant (Pb-free per PBF suffix) |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -4.6 A |
| On-Resistance RDS(on) max at VGS=-10V | — | 70 mOhm |
| On-Resistance RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) | — | -1 V to -3 V (typical) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (TA=25C) | — | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | — | Below 100 kHz |
| Qualification | — | JEDEC standard |
| Generation | — | Fourth Generation HEXFET |