IRF9Z34NPBF vs IRF7205PBF Comparison
Detailed side-by-side comparison of IRF9Z34NPBF by Infineon and IRF7205PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF9Z34NPBF | IRF7205PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.47 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (Vds) | -55 V | β |
| Continuous Drain Current (Id) at Tc=25C | -19 A | β |
| Pulsed Drain Current (Idm) | -72 A | β |
| Power Dissipation (Pd) at Tc=25C | 68 W | β |
| On-Resistance Rds(on) at Vgs=-10V | 100 milliohm (typical) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical/min/max] | β |
| Gate Charge (Qg) | 23.3 nC (per Mouser listing) | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55 C to +150 C (junction) |
| Package | TO-220AB (through-hole, 3-pin) | SO-8 |
| Mounting Type | Through Hole | Surface Mount |
| Pinout (G-D-S) | Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source | β |
| Technology | HEXFET (5th generation) | IR MOSFET (HEXFET, planar cell) |
| Lead-Free / Halogen-Free | Yes (PBF suffix) | β |
| RoHS Status | Compliant | Compliant (Pb-free per PBF suffix) |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -30 V |
| Continuous Drain Current (ID) | β | -4.6 A |
| On-Resistance RDS(on) max at VGS=-10V | β | 70 mOhm |
| On-Resistance RDS(on) max at VGS=-4.5V | β | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) | β | -1 V to -3 V (typical) |
| Gate Charge Qg | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (TA=25C) | β | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | β | Below 100 kHz |
| Qualification | β | JEDEC standard |
| Generation | β | Fourth Generation HEXFET |