IRFB3207ZPBF vs IRFB4127PBF Vergleich

Detaillierter Direktvergleich von IRFB3207ZPBF von Infineon und IRFB4127PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB3207ZPBF IRFB4127PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,62 $1,68
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF IRFB4127PBF
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) TrenchFET Gen 6 (HEXFET)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C -55C to +175C
Gehäuse TO-220AB (3-lead through-hole) —
Montageart Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL-Level N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 200 V
Continuous Drain Current (Id) at Tc — 76 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Drain-Source On-Resistance (Rds(on)) max — 20 mOhm
Total Gate Charge (Qg) — 100 nC
Power Dissipation (Pd) at Tc — 375 W
Gehäuse / Bauform — TO-220AB (through-hole)
RoHS-Status — Lead-Free (PBF suffix indicates RoHS compliance)
Configuration — Single

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