IRFB3207ZPBF vs IRFB4127PBF 비교
다음의 상세 나란히 비교: IRFB3207ZPBF 제조: Infineon 및 IRFB4127PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFB3207ZPBF | IRFB4127PBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.62 | $1.68 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFB3207ZPBF | IRFB4127PBF |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | TrenchFET Gen 6 (HEXFET) |
| Drain-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| 동작 접합 온도 | -55 C to +175 C | -55C to +175C |
| 패키지 | TO-220AB (3-lead through-hole) | — |
| 실장 유형 | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL 레벨 | N/A (through-hole) | — |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 200 V |
| Continuous Drain Current (Id) at Tc | — | 76 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Drain-Source On-Resistance (Rds(on)) max | — | 20 mOhm |
| Total Gate Charge (Qg) | — | 100 nC |
| Power Dissipation (Pd) at Tc | — | 375 W |
| 패키지 / 케이스 | — | TO-220AB (through-hole) |
| RoHS 상태 | — | Lead-Free (PBF suffix indicates RoHS compliance) |
| Configuration | — | Single |