IRFB3207ZPBF vs IRFB7437PBF Vergleich
Detaillierter Direktvergleich von IRFB3207ZPBF von Infineon und IRFB7437PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFB3207ZPBF | IRFB7437PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,62 | $0,92 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | — |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | StrongIRFET™, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 75 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | 250 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | -55°C to +175°C |
| Gehäuse | TO-220AB (3-lead through-hole) | TO-220AB (through-hole, 3 leads) |
| Montageart | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| MSL-Level | N/A (through-hole) | Not Applicable (through-hole package) |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Continuous Drain Current (ID, Tc=25°C) | — | 195 A |
| R_DS(on) typ @ VGS=10V | — | 1.5 mΩ |
| R_DS(on) max @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 3.0 V (1.7 V min, 3.9 V max per datasheet family) |
| Total Gate Charge (Qg) | — | 150 nC |
| Miller Plateau Charge (Qgd) | — | 49 nC |
| Power Dissipation (PD @ Tc=25°C) | — | 230 W |
| Thermal Resistance Junction-to-Case (RθJC) | — | 0.62 °C/W |
| Lead Finish | — | Lead-free (PBF - Pb-free plating) |
| RoHS-Status | — | Compliant |
| AEC-Q101 Automotive | — | Not qualified (industrial/consumer) |