IRFB3207ZPBF vs IRFB7437PBF 비교

다음의 상세 나란히 비교: IRFB3207ZPBF 제조: Infineon 및 IRFB7437PBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFB3207ZPBF IRFB7437PBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.62 $0.92
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) StrongIRFET™, N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 75 V 40 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A 250 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
동작 접합 온도 -55 C to +175 C -55°C to +175°C
패키지 TO-220AB (3-lead through-hole) TO-220AB (through-hole, 3 leads)
실장 유형 Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL 레벨 N/A (through-hole) Not Applicable (through-hole package)
Avalanche Rated Yes (improved Z-variant ruggedness) —
Continuous Drain Current (ID, Tc=25°C) — 195 A
R_DS(on) typ @ VGS=10V — 1.5 mΩ
R_DS(on) max @ VGS=10V — 2.0 mΩ
Gate-Source Threshold Voltage (VGS(th) typ) — 3.0 V (1.7 V min, 3.9 V max per datasheet family)
Total Gate Charge (Qg) — 150 nC
Miller Plateau Charge (Qgd) — 49 nC
Power Dissipation (PD @ Tc=25°C) — 230 W
Thermal Resistance Junction-to-Case (RθJC) — 0.62 °C/W
Lead Finish — Lead-free (PBF - Pb-free plating)
RoHS 상태 — Compliant
AEC-Q101 Automotive — Not qualified (industrial/consumer)

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