IRFB52N15DPBF vs IRFB7534PBF Vergleich

Detaillierter Direktvergleich von IRFB52N15DPBF von Infineon und IRFB7534PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFB52N15DPBF IRFB7534PBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,65 $1,85
Drain-Source Voltage (V(BR)DSS) 150 V —
Continuous Drain Current (ID) at TC=25C 51 A —
Pulsed Drain Current (IDM) 204 A —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V —
Total Gate Charge (Qg) 60 nC (typical) —
Power Dissipation (PD) at TC=25C 230 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Betriebs-Sperrschichttemperatur -55 C to +175 C —
Package Type TO-220AB (through-hole) —
Polarity / Channel Type N-Channel Enhancement Mode —
Technology HEXFET (vertical DMOS, hexagonal cell) StrongIRFET™ (planar N-channel)
Montageart Through Hole Through Hole
RoHS-Status Compliant Compliant (PbF suffix)
Lead-Free Finish Yes (Pb-free PBF suffix) —
Qualification Standard Industrial market (per IR/Infineon) —
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Gehäuse — TO-220AB
Betriebstemperaturbereich — -55C to +175C
MSL-Level — MSL1 (unlimited floor life)

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