IRFB52N15DPBF vs IRFB7534PBF 比較
詳細な並列比較: IRFB52N15DPBF メーカー: Infineon および IRFB7534PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRFB52N15DPBF | IRFB7534PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.65 | $1.85 |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | — |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | — |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| 動作接合温度 | -55 C to +175 C | — |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | StrongIRFET™ (planar N-channel) |
| 実装タイプ | Through Hole | Through Hole |
| RoHS ステータス | Compliant | Compliant (PbF suffix) |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | — |
| Qualification Standard | Industrial market (per IR/Infineon) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7534PBF |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 195 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Power Dissipation (PD) at Tc=25C | — | 294 W |
| On-Resistance RDS(on) max at VGS=10V | — | 2.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 3.7 V (typ) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Avalanche Energy Rated | — | Yes |
| パッケージ | — | TO-220AB |
| 動作温度範囲 | — | -55C to +175C |
| MSLレベル | — | MSL1 (unlimited floor life) |