IRFB7437PBF vs IRF640NPBF Vergleich
Detaillierter Direktvergleich von IRFB7437PBF von Infineon und IRF640NPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFB7437PBF | IRF640NPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,88 |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Technology | StrongIRFET™, N-Channel Trench MOSFET | HEXFET (5th Generation) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 195 A | — |
| Silicon-Limited Drain Current | 250 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) typ @ VGS=10V | 1.5 mΩ | — |
| R_DS(on) max @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 3.0 V (1.7 V min, 3.9 V max per datasheet family) | — |
| Total Gate Charge (Qg) | 150 nC | 44.7 nC |
| Miller Plateau Charge (Qgd) | 49 nC | — |
| Power Dissipation (PD @ Tc=25°C) | 230 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | -55C to +150C |
| Thermal Resistance Junction-to-Case (RθJC) | 0.62 °C/W | — |
| Gehäuse | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole, 3-pin) |
| Montageart | Through Hole | Through Hole |
| Lead Finish | Lead-free (PBF - Pb-free plating) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | Not Applicable (through-hole package) | — |
| AEC-Q101 Automotive | Not qualified (industrial/consumer) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Transistortyp | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |