IRFB7437PBF vs IRF640NPBF Comparaison
Comparaison détaillée côte à côte de IRFB7437PBF par Infineon et IRF640NPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFB7437PBF | IRF640NPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,92 | $0,88 |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Technology | StrongIRFET™, N-Channel Trench MOSFET | HEXFET (5th Generation) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 195 A | — |
| Silicon-Limited Drain Current | 250 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current] |
| R_DS(on) typ @ VGS=10V | 1.5 mΩ | — |
| R_DS(on) max @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 3.0 V (1.7 V min, 3.9 V max per datasheet family) | — |
| Total Gate Charge (Qg) | 150 nC | 44.7 nC |
| Miller Plateau Charge (Qgd) | 49 nC | — |
| Power Dissipation (PD @ Tc=25°C) | 230 W | — |
| Température de jonction en fonctionnement | -55°C to +175°C | -55C to +150C |
| Thermal Resistance Junction-to-Case (RθJC) | 0.62 °C/W | — |
| Boîtier | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole, 3-pin) |
| Type de montage | Through Hole | Through Hole |
| Lead Finish | Lead-free (PBF - Pb-free plating) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | Not Applicable (through-hole package) | — |
| AEC-Q101 Automotive | Not qualified (industrial/consumer) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Type de transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |