IRFB7437PBF vs IRFB3207ZPBF Vergleich
Detaillierter Direktvergleich von IRFB7437PBF von Infineon und IRFB3207ZPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFB7437PBF | IRFB3207ZPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $1,62 |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | StrongIRFET™, N-Channel Trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID, Tc=25°C) | 195 A | — |
| Silicon-Limited Drain Current | 250 A | 170 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current value] |
| R_DS(on) typ @ VGS=10V | 1.5 mΩ | — |
| R_DS(on) max @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 3.0 V (1.7 V min, 3.9 V max per datasheet family) | — |
| Total Gate Charge (Qg) | 150 nC | — |
| Miller Plateau Charge (Qgd) | 49 nC | — |
| Power Dissipation (PD @ Tc=25°C) | 230 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RθJC) | 0.62 °C/W | — |
| Gehäuse | TO-220AB (through-hole, 3 leads) | TO-220AB (3-lead through-hole) |
| Montageart | Through Hole | Through Hole |
| Lead Finish | Lead-free (PBF - Pb-free plating) | — |
| RoHS-Status | Compliant | — |
| MSL-Level | Not Applicable (through-hole package) | N/A (through-hole) |
| AEC-Q101 Automotive | Not qualified (industrial/consumer) | — |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |