IRFB7437PBF vs IRFB3207ZPBF Comparison
Detailed side-by-side comparison of IRFB7437PBF by Infineon and IRFB3207ZPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFB7437PBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | StrongIRFET™, N-Channel Trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID, Tc=25°C) | 195 A | — |
| Silicon-Limited Drain Current | 250 A | 170 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current value] |
| R_DS(on) typ @ VGS=10V | 1.5 mΩ | — |
| R_DS(on) max @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 3.0 V (1.7 V min, 3.9 V max per datasheet family) | — |
| Total Gate Charge (Qg) | 150 nC | — |
| Miller Plateau Charge (Qgd) | 49 nC | — |
| Power Dissipation (PD @ Tc=25°C) | 230 W | — |
| Operating Junction Temperature | -55°C to +175°C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RθJC) | 0.62 °C/W | — |
| Package | TO-220AB (through-hole, 3 leads) | TO-220AB (3-lead through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead Finish | Lead-free (PBF - Pb-free plating) | — |
| RoHS Status | Compliant | — |
| MSL Level | Not Applicable (through-hole package) | N/A (through-hole) |
| AEC-Q101 Automotive | Not qualified (industrial/consumer) | — |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |