IRFR1018ETRPBF vs IRFR5410TRPBF Vergleich
Detaillierter Direktvergleich von IRFR1018ETRPBF von Infineon und IRFR5410TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR1018ETRPBF | IRFR5410TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,36 | $0,71 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) | 79 A (Tc) | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Rds(on) Max @ Vgs=10V | 8.4 mΩ | — |
| Rds(on) Max @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | — |
| Gate Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 46 nC | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Maximum Power Dissipation (Pd) | 110 W (Tc) | — |
| Betriebstemperaturbereich | -55 °C to +175 °C | -55 °C to +150 °C (TJ) |
| Gehäuse | TO-252AA (D-Pak) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Technology | HEXFET | HEXFET (advanced process, Gen 5) |
| RoHS-Status | Compliant | — |
| Lead-Free | Yes | — |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes | Yes (fully avalanche rated) |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| Continuous Drain Current (ID) at TC = 25 °C | — | -13 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | — | 205 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Total Gate Charge (Qg) typ | — | 70 nC |
| Power Dissition (PD) at TC = 25 °C | — | 66 W |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |
| RDS(on) Test Conditions | — | VGS = -10 V, ID = -7.0 A |