IRFR1205TRPBF vs IRLR2705TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR1205TRPBF von Infineon und IRLR2705TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR1205TRPBF | IRLR2705TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,49 | $0,32 |
| FET Type | N-Channel | — |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR MOSFET (HEXFET, 5th generation) |
| Drain-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 44 A | 28 A |
| Pulsed Drain Current (IDM) | 160 A | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | 20 V |
| Gate Threshold Voltage (VGS(th)) | 2 V min, 4 V max | — |
| On-Resistance RDS(on) at VGS=10V | 27 mOhm max | — |
| Total Gate Charge (Qg) | 43.3 nC | — |
| Power Dissition (PD) at TC=25C | 107 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant (PBF suffix = lead-free) | — |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen status] | — |
| Transistortyp | — | N-Channel MOSFET (HexFET) |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 40 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at TC=25C | — | 68 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS Status | — | Lead-Free, RoHS Compliant |
| Configuration | — | Single N-Channel |
| MSL-Level | — | 1 (unlimited floor life at <30C / 85% RH) |