IRFR1205TRPBF vs IRLR2705TRLPBF 对比

详细并排对比 IRFR1205TRPBF 出自 Infineon 和 IRLR2705TRLPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IRFR1205TRPBF IRLR2705TRLPBF
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.49 $0.32
FET Type N-Channel —
Technology HEXFET (IR MOSFET, 5th generation) IR MOSFET (HEXFET, 5th generation)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC=25C 44 A 28 A
Pulsed Drain Current (IDM) 160 A —
Gate-Source Voltage (VGS) max +/- 20 V 20 V
Gate Threshold Voltage (VGS(th)) 2 V min, 4 V max —
On-Resistance RDS(on) at VGS=10V 27 mOhm max —
Total Gate Charge (Qg) 43.3 nC —
Power Dissition (PD) at TC=25C 107 W —
工作结温 -55C to +175C —
封装 TO-252AA (DPAK) TO-252AA (DPAK)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant (PBF suffix = lead-free) —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen status] —
晶体管类型 — N-Channel MOSFET (HexFET)
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 40 mOhm
Gate-Source Threshold Voltage (VGS(th)) — 1.0 V to 2.0 V (logic-level)
Power Dissipation (PD) at TC=25C — 68 W
工作温度范围 — -55C to +175C
Avalanche Rated — Yes (fully avalanche rated)
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant
Configuration — Single N-Channel
MSL 等级 — 1 (unlimited floor life at <30C / 85% RH)

数据手册与资源

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