IRFR120NTRPBF vs IRFL014NTRPBF Vergleich
Detaillierter Direktvergleich von IRFR120NTRPBF von Infineon und IRFL014NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR120NTRPBF | IRFL014NTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,26 | $0,30 |
| Drain-to-Source Voltage (VDS) | 100 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Betriebs-Sperrschichttemperaturbereich | -55C to +175C | — |
| Gehäuse | TO-252AA (DPAK) | SOT-223 (TO-261-4), 4-pin (3 + tab) |
| Montageart | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET (planar N-channel, fifth generation) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Continuous Drain Current (ID) at 25 C | — | 1.9 A |
| Continuous Drain Current (ID) at 70 C | — | [DATA_NEEDED: ID at 70 C] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 160 milliohm |
| Gate Charge (Qg) typical | — | 7 nC |
| Threshold Voltage VGS(th) typical | — | [DATA_NEEDED: VGS(th)] |
| Power Dissipation (PD) at 25 C | — | 1.0 W (free air), up to 2.1 W with proper PCB copper |
| Betriebstemperaturbereich | — | -55 C to +150 C (junction) |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Yes (dynamic dv/dt rated) |
| Lead-Free / RoHS | — | Yes / Compliant |
| MSL-Level | — | Level 1 (per JEDEC J-STD-020) |