IRFR120NTRPBF vs IRFL014NTRPBF 비교

다음의 상세 나란히 비교: IRFR120NTRPBF 제조: Infineon 및 IRFL014NTRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFR120NTRPBF IRFL014NTRPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.26 $0.30
Drain-to-Source Voltage (VDS) 100 V 55 V
Continuous Drain Current (ID) at TC=25C 9.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C 48 W —
Static Drain-to-Source On-Resistance (RDS(on)) max 210 milliohms at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2 V to 4 V typical —
Total Gate Charge (Qg) typical 16.7 nC —
Gate-to-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
동작 접합 온도 범위 -55C to +175C —
패키지 TO-252AA (DPAK) SOT-223 (TO-261-4), 4-pin (3 + tab)
실장 유형 Surface Mount Surface Mount
Channel Type N-Channel Enhancement Mode —
Technology HEXFET (IR MOSFET fifth generation) HEXFET (planar N-channel, fifth generation)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Thermal Resistance Junction-to-Case (RthJC) max [DATA_NEEDED: RthJC] —
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
FET Type — N-Channel MOSFET, Metal Oxide
Continuous Drain Current (ID) at 25 C — 1.9 A
Continuous Drain Current (ID) at 70 C — [DATA_NEEDED: ID at 70 C]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 160 milliohm
Gate Charge (Qg) typical — 7 nC
Threshold Voltage VGS(th) typical — [DATA_NEEDED: VGS(th)]
Power Dissipation (PD) at 25 C — 1.0 W (free air), up to 2.1 W with proper PCB copper
동작 온도 범위 — -55 C to +150 C (junction)
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Yes (dynamic dv/dt rated)
Lead-Free / RoHS — Yes / Compliant
MSL 레벨 — Level 1 (per JEDEC J-STD-020)

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