IRFR220NTRLPBF vs IRFR220NTRPBF Vergleich
Detaillierter Direktvergleich von IRFR220NTRLPBF von Infineon und IRFR220NTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR220NTRLPBF | IRFR220NTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,22 | $0,22 |
| Polarity | N-Channel | — |
| Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 5 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 15 nC (typical per Mouser listing) |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | — |
| Power Dissipation (Pd) at Tc=25C | 43 W | — |
| Betriebstemperaturbereich | -55C to +150C (junction) | — |
| Gehäuse | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS-Status | Compliant (Pb-free PBF suffix) | Compliant (PBF suffix) |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | — |
| Avalanche Rated | Yes (HEXFET ruggedized design) | — |
| Technology Family | HEXFET, Planar, Generation 3 | — |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| Betriebs-Sperrschichttemperatur | — | -55°C to +150°C |
| Avalanche Energy Rated | — | Yes (fully characterized) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |