IRFR220NTRLPBF vs IRFR220NTRPBF Comparaison
Comparaison détaillée côte à côte de IRFR220NTRLPBF par Infineon et IRFR220NTRPBF par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFR220NTRLPBF | IRFR220NTRPBF |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,22 | $0,22 |
| Polarity | N-Channel | — |
| Mode | Enhancement | — |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 5 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 0.800 ohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | 15 nC (typical per Mouser listing) |
| Gate-to-Drain Charge (Qgd) | Low (per datasheet - HEXFET design) | — |
| Power Dissipation (Pd) at Tc=25C | 43 W | — |
| Plage de température de fonctionnement | -55C to +150C (junction) | — |
| Boîtier | TO-252AA (DPAK), 2 Leads + Tab, SC-63 | TO-252AA (DPAK), surface mount |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| Statut RoHS | Compliant (Pb-free PBF suffix) | Compliant (PBF suffix) |
| Packaging | Tape & Reel (Left orientation - TRLPBF) | — |
| Avalanche Rated | Yes (HEXFET ruggedized design) | — |
| Technology Family | HEXFET, Planar, Generation 3 | — |
| FET Type | — | N-Channel MOSFET |
| Technology | — | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance Rds(on) max at VGS=10V | — | 600 milliohm |
| Maximum Power Dissition (PD) at TC=25°C | — | 43 W |
| Température de jonction en fonctionnement | — | -55°C to +150°C |
| Avalanche Energy Rated | — | Yes (fully characterized) |
| Lead-Free | — | Yes (PBF suffix indicates Pb-free plating) |