IRFR220NTRPBF vs IRFR2405TRPBF Vergleich

Detaillierter Direktvergleich von IRFR220NTRPBF von Infineon und IRFR2405TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR220NTRPBF IRFR2405TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,22 $0,61
FET Type N-Channel MOSFET N-Channel
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) 70 nC
Maximum Power Dissition (PD) at TC=25°C 43 W —
Betriebs-Sperrschichttemperatur -55°C to +150°C -55C to +175C
Gehäuse TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Montageart Surface Mount Surface Mount
MSL-Level 1 (unlimited floor life per JEDEC J-STD-020) 1
RoHS-Status Compliant (PBF suffix) Compliant (Lead-Free PBF suffix)
Avalanche Energy Rated Yes (fully characterized) —
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Pin-Anzahl — 3 (Gate, Drain, Source) + Tab
Halogenfrei — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

Datenblätter & Ressourcen

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