IRFR2405TRPBF vs IRF8736TRPBF Vergleich

Detaillierter Direktvergleich von IRFR2405TRPBF von Infineon und IRF8736TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRFR2405TRPBF IRF8736TRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $0,27
Manufacturer Infineon Technologies —
Part Status Active —
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) StrongIRFET / HEXFET
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 56 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 16 mOhm —
On-Resistance RDS(on) max at VGS=5V [DATA_NEEDED: RDS(on) at 5V] —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Betriebs-Sperrschichttemperatur -55C to +175C —
Gehäuse TO-252AA (DPAK) SO-8 (8-SO, MS-012AA)
Montageart Surface Mount Surface Mount
Pin-Anzahl 3 (Gate, Drain, Source) + Tab —
MSL-Level 1 1 (per JEDEC J-STD-020)
RoHS-Status Compliant (Lead-Free PBF suffix) —
Halogenfrei [DATA_NEEDED: halogen-free status] —
Avalanche Rated Yes (100% avalanche tested) Yes (fully characterized avalanche voltage)
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Betriebstemperaturbereich — -55C to +150C (junction)
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Configuration — Single
Packaging — Tape & Reel (TRPBF suffix)

Datenblätter & Ressourcen

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