IRFR2405TRPBF vs IRF8736TRPBF Comparación
Comparación detallada lado a lado de IRFR2405TRPBF por Infineon y IRF8736TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR2405TRPBF | IRF8736TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,61 | $0,27 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | StrongIRFET / HEXFET |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Temperatura de unión de funcionamiento | -55C to +175C | — |
| Encapsulado | TO-252AA (DPAK) | SO-8 (8-SO, MS-012AA) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 3 (Gate, Drain, Source) + Tab | — |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| Estado RoHS | Compliant (Lead-Free PBF suffix) | — |
| Sin halógenos | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | Yes (fully characterized avalanche voltage) |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| Power Dissipation (PD) Max at TA=25C | — | 2.5 W |
| Drain-Source On-Resistance (RDS(on)) Max | — | 4.8 mOhm at VGS = 10V |
| Gate Charge (Qg) Typical | — | 17 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free, RoHS compliant) |
| Configuration | — | Single |
| Packaging | — | Tape & Reel (TRPBF suffix) |