IRFR3411TRPBF vs IRF7815TRPBF Vergleich
Detaillierter Direktvergleich von IRFR3411TRPBF von Infineon und IRF7815TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3411TRPBF | IRF7815TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,36 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel MOSFET |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +150C (Tj) |
| Gehäuse | TO-252AA (DPAK) | SO-8 (8-SO) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | IR MOSFET (HEXFET) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) at Ta=25C | — | 5.1 A |
| Rds(on) Max at Vgs=10V | — | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | — | 3.0 V |
| Total Gate Charge (Qg) Typ | — | 25 nC |
| Maximum Power Dissipation (Ta=25C) | — | 2.5 W |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant (Pb-free) |
| Lead-Free | — | Yes |
| Configuration | — | Single |