IRFR3411TRPBF vs IRFR3710ZTRPBF Vergleich
Detaillierter Direktvergleich von IRFR3411TRPBF von Infineon und IRFR3710ZTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3411TRPBF | IRFR3710ZTRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,55 | $0,42 |
| Polarity | N-Channel | — |
| FET Type | MOSFET (Metal Oxide) | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | — |
| RDS(on) max @ VGS=10V | 44 mOhm | — |
| Continuous Drain Current (Id) @ Tc | 32 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Pd) @ Tc | 130 W | — |
| Gate Charge (Qg) | 48 nC | — |
| Operating Mode | Enhancement | — |
| Maximum Junction Temperature | 175 C | — |
| Betriebstemperaturbereich | -55 C to +175 C | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Anzahl der Pins | 3 | — |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| dv/dt Rating | Dynamic dv/dt rated | — |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 56 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | — | 18 mOhm |
| Power Dissipation (PD) at TC=25C | — | 140 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| RoHS-Status | — | Compliant |
| Lead-Free | — | Yes |