IRFR3411TRPBF vs IRFR3710ZTRPBF Comparison
Detailed side-by-side comparison of IRFR3411TRPBF by Infineon and IRFR3710ZTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR3411TRPBF | IRFR3710ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.42 |
| Polarity | N-Channel | β |
| FET Type | MOSFET (Metal Oxide) | N-Channel |
| V(BR)DSS (Drain-Source Breakdown Voltage) | 100 V | β |
| RDS(on) max @ VGS=10V | 44 mOhm | β |
| Continuous Drain Current (Id) @ Tc | 32 A | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (Pd) @ Tc | 130 W | β |
| Gate Charge (Qg) | 48 nC | β |
| Operating Mode | Enhancement | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | β |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 | β |
| Technology | HEXFET Power MOSFET (IR) | HEXFET (IR MOSFET) |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| dv/dt Rating | Dynamic dv/dt rated | β |
| Lead-Free / RoHS | Yes (Lead-free, PBF suffix) | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC=25C | β | 56 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM] |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 18 mOhm |
| Power Dissipation (PD) at TC=25C | β | 140 W |
| Operating Junction Temperature | β | -55C to +175C |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |