IRFR3607TRPBF vs IRFR1205TRPBF Vergleich
Detaillierter Direktvergleich von IRFR3607TRPBF von Infineon und IRFR1205TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR3607TRPBF | IRFR1205TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,49 |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 75 V | — |
| Continuous Drain Current (ID, Tc) | 56 A | — |
| Calculated Die Drain Current | 80 A | — |
| On-State Resistance (RDS(on)) | 9 mOhm @ VGS=10V, ID=46A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | 2 V min, 4 V max |
| Total Gate Charge (Qg) | 56 nC | 43.3 nC |
| Gate-to-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD, Tc) | 140 W | — |
| Thermal Resistance (RthJC) | 1.0 C/W | — |
| Betriebstemperaturbereich | -55C to +175C (TJ max 175C per datasheet convention) | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Montageart | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar DMOS) | HEXFET (IR MOSFET, 5th generation) |
| Avalanche SOA | Fully characterized | — |
| RoHS / Lead-Free | Compliant / Pb-free (PBF suffix, JESD-609 e3) | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| RoHS-Status | — | Compliant (PBF suffix = lead-free) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |