IRFR4615TRLPBF vs IRF7815TRPBF Vergleich
Detaillierter Direktvergleich von IRFR4615TRLPBF von Infineon und IRF7815TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR4615TRLPBF | IRF7815TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,36 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Betriebstemperaturbereich | -55C to +175C | -55C to +150C (Tj) |
| Gehäuse | TO-252AA (DPAK) | SO-8 (8-SO) |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Einzelpuls-Avalanche-Energie | 109 mJ | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) at Ta=25C | — | 5.1 A |
| Rds(on) Max at Vgs=10V | — | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | — | 3.0 V |
| Total Gate Charge (Qg) Typ | — | 25 nC |
| Maximum Power Dissipation (Ta=25C) | — | 2.5 W |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant (Pb-free) |
| Lead-Free | — | Yes |
| Configuration | — | Single |
| Avalanche Rated | — | Yes |