IRFR4615TRLPBF vs IRF7815TRPBF Comparación
Comparación detallada lado a lado de IRFR4615TRLPBF por Infineon y IRF7815TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | IRFR4615TRLPBF | IRF7815TRPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,39 | $0,36 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +150C (Tj) |
| Encapsulado | TO-252AA (DPAK) | SO-8 (8-SO) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Energía de avalancha de pulso único | 109 mJ | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) at Ta=25C | — | 5.1 A |
| Rds(on) Max at Vgs=10V | — | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | — | 3.0 V |
| Total Gate Charge (Qg) Typ | — | 25 nC |
| Maximum Power Dissipation (Ta=25C) | — | 2.5 W |
| Nivel MSL | — | 1 |
| Estado RoHS | — | Compliant (Pb-free) |
| Lead-Free | — | Yes |
| Configuration | — | Single |
| Avalanche Rated | — | Yes |