IRFR4615TRLPBF vs IRFH7084TRPBF Vergleich
Detaillierter Direktvergleich von IRFR4615TRLPBF von Infineon und IRFH7084TRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR4615TRLPBF | IRFH7084TRPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,45 |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | StrongIRFET™ (trench MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | 40 V |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | ±20 V |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Betriebstemperaturbereich | -55C to +175C | -55°C to +175°C (TJ) |
| Gehäuse | TO-252AA (DPAK) | 8-PQFN 5x6 mm (SuperSO8) |
| Montageart | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | — |
| Einzelpuls-Avalanche-Energie | 109 mJ | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | — | 100 A |
| Silicon-Limited Drain Current | — | 265 A |
| Power Dissipation (PD, Tc=25°C) | — | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | — | 0.95 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | — | 6560 pF |
| MSL-Level | — | 1 |
| RoHS-Status | — | Compliant |
| Halogenfrei | — | Compliant |
| RthJC max | — | 0.96 °C/W (per datasheet) |