IRFR9120NTRLPBF vs IRFR5305TRLPBF Vergleich
Detaillierter Direktvergleich von IRFR9120NTRLPBF von Infineon und IRFR5305TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFR9120NTRLPBF | IRFR5305TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $0,38 |
| Transistor Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | -55 V |
| Continuous Drain Current (ID) | -6.6 A (Tc) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | -2 V to -4 V | [DATA_NEEDED: VGS(th) range] |
| On-Resistance (RDS(on)) | 480 mOhm max @ VGS = -10 V | — |
| Gate Charge (Qg) | 18 nC (typ) | — |
| Power Dissipation (PD) | 40 W (Tc) | — |
| Betriebstemperaturbereich | -55C to +150C (Tj) | — |
| Gehäuse | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Montageart | Surface Mount | Surface Mount |
| Pin-Anzahl | 3 (Gate, Drain, Source) | — |
| Technology | IR MOSFET (planar) | HEXFET fifth-generation planar MOSFET |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Polarity / Channel Type | — | P-Channel |
| Continuous Drain Current (ID) at Tc=25C | — | -31 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 65 mΩ |
| RDS(on) max at VGS=-5V | — | [DATA_NEEDED: RDS(on) at VGS=-5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| Lead-Free / RoHS | — | Yes (Pb-free, suffix "PBF") |
| Tape & Reel Orientation | — | Left orientation (TRLPBF = Tape & Reel, Left) |