IRFS7440TRLPBF vs IRFS4321TRLPBF Vergleich
Detaillierter Direktvergleich von IRFS7440TRLPBF von Infineon und IRFS4321TRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFS7440TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $1,73 |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET | — |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | MOSFET (Metal Oxide Semiconductor) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A | 85 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Tc=25C | 208 W | 350 W |
| On-Resistance (RDS(on)) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 90 nC (typical) | — |
| Gate Drive Voltage (optimized) | 10 V (normal level) | — |
| Operating Frequency Range (optimized) | <100 kHz | — |
| Gehäuse | TO-263 (D2PAK), surface mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | [DATA_NEEDED: junction temperature range] | — |
| RoHS-Status | Compliant (lead-free) | Compliant |
| Qualification | JEDEC standard | — |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C |