IRFS7440TRLPBF vs IRFS4321TRLPBF Comparação
Comparação detalhada lado a lado de IRFS7440TRLPBF por Infineon e IRFS4321TRLPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | IRFS7440TRLPBF | IRFS4321TRLPBF |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,98 | $1,73 |
| Manufacturer | Infineon Technologies | — |
| Series | StrongIRFET | — |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | MOSFET (Metal Oxide Semiconductor) | IR HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 40 V | 150 V |
| Continuous Drain Current (ID) at Tc=25C | 120 A | 85 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at Tc=25C | 208 W | 350 W |
| On-Resistance (RDS(on)) max at VGS=10V | 2.5 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 90 nC (typical) | — |
| Gate Drive Voltage (optimized) | 10 V (normal level) | — |
| Operating Frequency Range (optimized) | <100 kHz | — |
| Encapsulamento | TO-263 (D2PAK), surface mount | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Tipo de montagem | Surface Mount | Surface Mount |
| Faixa de temperatura de operação | [DATA_NEEDED: junction temperature range] | — |
| Status RoHS | Compliant (lead-free) | Compliant |
| Qualification | JEDEC standard | — |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| RDS(on) Max at VGS=10V | — | 15 mOhm |
| RDS(on) Max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-to-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) Typ | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) Typ | — | 71 nC |
| Total Gate Charge (Qg) Max | — | 110 nC |
| Thermal Resistance Junction-to-Case (RθJC) Max | — | 0.45 C/W |
| Thermal Resistance Junction-to-Case (RθJC) End-of-Life | — | 0.65 C/W (after 1000 cycles -55C to +150C) |
| Temperatura de junção de operação | — | -55C to +175C |