IRFU5305PBF vs IRF5305PBF Vergleich
Detaillierter Direktvergleich von IRFU5305PBF von Infineon und IRF5305PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFU5305PBF | IRF5305PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,68 | $0,51 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc | -31 A | — |
| Pulsed Drain Current (IDM) | -110 A (pulsed) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=-10V | 65 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) | 42 nC (typical) | 42 nC (typical) |
| Power Dissipation (PD) at Tc=25°C | 110 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55C to +175C |
| Thermal Resistance Junction-to-Case (RθJC) | 1.36 °C/W | — |
| Thermal Resistance Junction-to-Ambient (RθJA) | 62 °C/W | — |
| Gehäuse | IPAK (TO-251AA) Through-Hole, 3 pins | TO-220AB (through-hole, 3-pin + tab) |
| Montageart | Through Hole | Through Hole |
| Avalanche Rated | Yes (EAS rated) | — |
| RoHS Compliance | Compliant | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| Maximum Power Dissition (PD) at TC=25C | — | 110 W |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | — | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | — | [DATA_NEEDED: max RDS(on) at -10V] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | — | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | — | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Lead-Free Plating (PBF suffix) | — | Yes (Pb-free) |
| RoHS-Status | — | Compliant |
| Technology | — | HEXFET (planar DMOS) |