IRFU5305PBF vs IRF5305PBF Comparação

Comparação detalhada lado a lado de IRFU5305PBF por Infineon e IRF5305PBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IRFU5305PBF IRF5305PBF
Marca Infineon Infineon
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $0,68 $0,51
Polarity P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc -31 A —
Pulsed Drain Current (IDM) -110 A (pulsed) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=-10V 65 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Total Gate Charge (Qg) 42 nC (typical) 42 nC (typical)
Power Dissipation (PD) at Tc=25°C 110 W —
Temperatura de junção de operação -55 °C to +175 °C -55C to +175C
Thermal Resistance Junction-to-Case (RθJC) 1.36 °C/W —
Thermal Resistance Junction-to-Ambient (RθJA) 62 °C/W —
Encapsulamento IPAK (TO-251AA) Through-Hole, 3 pins TO-220AB (through-hole, 3-pin + tab)
Tipo de montagem Through Hole Through Hole
Avalanche Rated Yes (EAS rated) —
RoHS Compliance Compliant —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TC=100C — [DATA_NEEDED: ID at TC=100C]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Lead-Free Plating (PBF suffix) — Yes (Pb-free)
Status RoHS — Compliant
Technology — HEXFET (planar DMOS)

Fichas técnicas e recursos

Ver todos os produtos Criar BOM Solicitar cotação