IRFZ34NPBF vs IRF150P220AKMA1 Vergleich
Detaillierter Direktvergleich von IRFZ34NPBF von Infineon und IRF150P220AKMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRFZ34NPBF | IRF150P220AKMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,61 | $3,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | HEXFET (Planar DMOS, 5th generation) | StrongIRFET |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +175C |
| Maximum Junction Temperature | 175 C | — |
| Gehäuse | TO-220AB (3-pin + tab, through-hole) | TO-247-3 (PG-TO247-3) |
| Montageart | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | — |
| RoHS-Status | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Part Number | — | IRF150P220AKMA1 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | — | 556 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |
| Lead-Free | — | Yes |