IRFZ34NPBF vs IRF150P220AKMA1 Comparaison
Comparaison détaillée côte à côte de IRFZ34NPBF par Infineon et IRF150P220AKMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | IRFZ34NPBF | IRF150P220AKMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $3,55 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Status | Active | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | HEXFET (Planar DMOS, 5th generation) | StrongIRFET |
| Drain-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 29 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (P_D) at Tc=25C | 68 W | — |
| On-Resistance R_DS(on) max at V_GS=10V | 40 mOhm | — |
| Gate Charge (Q_g) typ | 22.7 nC | — |
| Gate Threshold Voltage V_GS(th) typ | [DATA_NEEDED: gate threshold voltage] | — |
| Input Capacitance (C_iss) typ | [DATA_NEEDED: input capacitance] | — |
| Plage de température de fonctionnement | -55 C to +175 C | -55C to +175C |
| Maximum Junction Temperature | 175 C | — |
| Boîtier | TO-220AB (3-pin + tab, through-hole) | TO-247-3 (PG-TO247-3) |
| Type de montage | Through Hole | Through Hole |
| Lead-Free Status | Yes (Pb-free, RoHS compliant) | — |
| Qualification | JEDEC standard | — |
| Statut RoHS | Compliant | Compliant |
| Configuration | Single N-Channel, 3-pin (3+tab) | — |
| Part Number | — | IRF150P220AKMA1 |
| Type de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID) at Tc=25C | — | 203 A |
| On-Resistance (RDS(on) max) at VGS=10V | — | 2.7 mOhm |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Power Dissipation (Pd) at Tc=25C | — | 556 W |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Terminal Finish | — | Tin (Sn) |
| JESD-609 Code | — | e3 |
| Lead-Free | — | Yes |