IRL40S212ARMA1 vs BSZ900N20NS3GATMA1 Vergleich
Detaillierter Direktvergleich von IRL40S212ARMA1 von Infineon und BSZ900N20NS3GATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IRL40S212ARMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,31 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | — |
| Betriebstemperaturbereich | [DATA_NEEDED: Tj max] | — |
| Gehäuse | PG-TO263-3 (D2PAK) | PG-TSDSON-8 (TDSON-8 FL) |
| Montageart | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 (N-Channel Trench MOSFET) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL-Level | 1 (unlimited) | 1 (unlimited) |
| Part Number | — | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | — | 15.2 A |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | — | 90 mΩ |
| Typical RDS(on) @ VGS=10V | — | 77 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | — | 3.5 V |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD, Tc=25C) | — | 62.5 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| ESD Protection | — | Yes (integrated) |
| Avalanche Energy Rated | — | Yes (EAS) |