IRL40S212ARMA1 vs BSZ900N20NS3GATMA1 Comparación
Comparación detallada lado a lado de IRL40S212ARMA1 por Infineon y BSZ900N20NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IRL40S212ARMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,31 | $0,48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM] |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: Tj max] | — |
| Encapsulado | PG-TO263-3 (D2PAK) | PG-TSDSON-8 (TDSON-8 FL) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 (N-Channel Trench MOSFET) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Nivel MSL | 1 (unlimited) | 1 (unlimited) |
| Part Number | — | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | — | 15.2 A |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | — | 90 mΩ |
| Typical RDS(on) @ VGS=10V | — | 77 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | — | 3.5 V |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD, Tc=25C) | — | 62.5 W |
| Temperatura de unión de funcionamiento | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| ESD Protection | — | Yes (integrated) |
| Avalanche Energy Rated | — | Yes (EAS) |